Fast recovery bridge is an important component in power electronics, widely used in various power conversion, rectification, and frequency conversion systems. The fast recovery bridge, based on its fast reverse recovery time, can provide more efficient rectification performance, especially in high-frequency applications. However, in practical applications, it may be necessary to replace the original fast recovery bridge.
Fast recovery diode is a special type of diode designed to provide fast switching functionality in circuits, especially in high-frequency power supply and converter applications. So, what should be noted in circuit applications?
The diode categories we commonly use
Schottky diode is a fast recovery diode, which belongs to a low-power, ultra high speed semiconductor device. Its notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward conduction voltage drop is only about 0.4V. Its workmanship is finer and more complex than ordinary diodes, and its price is also higher, but its external performance and functionality are similar to ordinary diodes.
Fast recovery diode refers to a diode with a very short reverse recovery time (less than 5us). Gold doping measures are often used in the process, and PN junction structure is used in the structure, while some use improved PIN structure. Its forward voltage drop is higher than that of ordinary diodes (1-2V), and its reverse voltage withstand is mostly below 1200V. In terms of performance, it can be divided into two levels: fast recovery and express recovery, as well as three levels: ultra fast r
Field Effect Transistor (FET), abbreviated as FET, is a relatively new type of semiconductor material that uses the electric field effect to control the current of the transistor, hence its name. It is a semiconductor device that uses only one type of carrier to participate in conduction, which is a semiconductor device that controls the output current with input voltage. Divided by the carriers involved in conduction, it has N-channel devices with electrons as carriers and P-channel devices wi
